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UPD4218160LE-60 - CMOS 16M-Bit DRAM

UPD4218160LE-60_562058.PDF Datasheet


 Full text search : CMOS 16M-Bit DRAM


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PART Description Maker
HYB3165405ATL-60 HYB3165405ATL-50 HYB3165405ATL-40 16M x 4 Bit 4k EDO DRAM
16M x 4 Bit 8k EDO DRAM
16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
HYM72V1625GS-60 HYM72V1625GS-50 HM72V166 HYM72V162 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 50 ns, DMA168
16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
16M x 72-Bit EDO-DRAM Module (ECC - Module)
From old datasheet system
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYB3165400ATL-60 HYB3165400ATL-50 HYB3165400ATL-40 16M x 4 Bit 8k DRAM
16M x 4-Bit Dynamic RAM (4k & 8k Refresh)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD44160 16M X 1 STANDARD SRAM, 15 ns, PDSO54
16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1
NEC, Corp.
NEC Corp.
NEC[NEC]
HYM72V1600GS-50 HYM72V1610GS-50 HYM72V1600GS-50- H 16M x 72-Bit Dynamic RAM Module 16米x 72位动态随机存储器模块
16M x 72-Bit Dynamic RAM Module 16M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
SIEMENS AG
Siemens Semiconductor Group
GM71CS17403C GM71CS17403C-5 GM71CS17403C-6 GM71CS1 LED T5.5 24V12.5MA RED RoHS Compliant: Yes
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
Hynix Semiconductor Inc.
MT48LC16M16A2FG-7EITD MT48LC16M16A2P-75ITDTR 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 8 X 14 MM, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54
Micron Technology, Inc.
MX25L1605ZM MX25L1605ZMC-20 MX25L1605ZMC-20G MX25L 16M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY 16M X 1 FLASH 2.7V PROM, DSO8
Macronix International Co., Ltd.
HYI18T256160BF-25F HYI18T256160BC-25F HYB18T256160 16M X 16 DDR DRAM, 0.4 ns, PBGA84 GREEN, PLASTIC, TFBGA-84
16M X 16 DDR DRAM, 0.4 ns, PBGA84 PLASTIC, TFBGA-84
16M X 16 DDR DRAM, 0.45 ns, PBGA84
16M X 16 DDR DRAM, 0.5 ns, PBGA84
64M X 4 DDR DRAM, 0.45 ns, PBGA60
Qimonda AG
K4S561632C-TC75 K4S561632C K4S561632C-L1H K4S56163 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM
Samsung semiconductor
A48P4616B 16M X 16 Bit DDR DRAM
AMIC Technology
 
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UPD4218160LE-60 server UPD4218160LE-60 usb charger circuit UPD4218160LE-60 samsung UPD4218160LE-60 ICPRICE UPD4218160LE-60 lead
 

 

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